? 2009 ixys corporation, all rights reserved trencht2 tm hiperfet n-channel power mosfet phase leg topology ds100186(08/09) symbol test conditions characteristic values min. typ. max. c p coupling capacitance between shorted 40 pf pins and mounting tab in the case d s ,d a pin - pin 1.7 mm d s ,d a pin - backside metal 5.5 mm weight 9 g FMM150-0075X2F symbol test conditions maximum ratings v dss t j = 25 c to 175 c 75 v v dgr t j = 25 c to 175 c, r gs = 1m 75 v v gsm transient 30 v i d25 t c = 25 c 120 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c 115 a e as t c = 25 c 850 mj dv/dt i s i dm , v dd v dss ,t j 175 c 20 v/ns p d t c = 25 c 170 w advance technical information symbol test conditions maximum ratings t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c v isol 50/60h z , rms, t = 1min, leads-to-tab 2500 ~v t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v dss = 75v i d25 = 120a r ds(on) 5.8m t rr(typ) = 66ns t2 3 5 4 1 2 t1 3 5 4 1 2 isoplus i4-pak tm 1 5 isolated tab features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z low q g z low drain-to-tab capacitance z low package inductance advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. FMM150-0075X2F isoplus i4-pak tm outline ref: ixys co 0077 r0 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 75 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 250 a r ds(on) v gs = 10v, i d = 100a, note 1 5.8 m g fs v ds = 10v, i d = 60a, note 1 50 83 s c iss 10.5 nf c oss v gs = 0v, v ds = 25 v, f = 1 mhz 1165 pf c rss 125 pf t d(on) resistive switching times 23 ns t r v gs = 10v, v ds = 0.5 z v dss , i d = 115a 18 ns t d(off) r g = 2 (external) 33 ns t f 15 ns q g(on) 178 nc q gs v gs = 10v, v ds = 0.5 z v dss , i d = 100a 37 nc q gd 55 nc r thjc 0.88 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 230 a i sm repetitive, pulse width limited by t jm 900 a v sd i f = 75a, v gs = 0v, note 1 1.5 v t rr 66 ns i rm 4.4 a q rm 145 nc note 1. pulse test, t 300 s, duty cycle, d 2 %. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 115a, -di/dt = 100a/ s v r = 37v, v gs = 0v
? 2009 ixys corporation, all rights reserved FMM150-0075X2F fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0.00.10.20.30.40.50.60.70.80.91.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 6v 4v 5v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 360 012345678 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 6v 4v 5v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 6 v 4 v 5 v 3v fig. 4. r ds(on) normalized to i d = 75a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 150a i d = 75a fig. 5. r ds(on) normalized to i d = 75a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. FMM150-0075X2F ixys ref: FMM150-0075X2F(68)8-28-09 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 38v i d = 100a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1000.0 110100 v ds - volts i d - amperes 25s 100s 1ms 10ms 100ms dc r ds(on) limit t j = 175oc t c = 25oc single pulse
? 2009 ixys corporation, all rights reserved FMM150-0075X2F fig. 14. resistive turn-on rise time vs. drain current 10 12 14 16 18 20 22 110 120 130 140 150 160 170 180 190 200 210 220 230 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 2 ? , v gs = 10v v ds = 38v fig. 15. resistive turn-on switching times vs. gate resistance 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 r g - ohms t r - nanoseconds 10 15 20 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 230a, 115a fig. 16. resistive turn-off switching times vs. junction temperature 10 12 14 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 15 20 25 30 35 40 45 50 55 60 65 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 38v i d = 115a i d = 230a fig. 17. resistive turn-off switching times vs. drain current 10 12 14 16 18 20 22 24 26 110 120 130 140 150 160 170 180 190 200 210 220 230 i d - amperes t f - nanoseconds 20 25 30 35 40 45 50 55 60 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 38v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 5 10 15 20 25 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v gs = 10v v ds = 38v i d = 115a i d = 230a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 2 4 6 8 10 12 14 16 r g - ohms t f - nanoseconds 0 40 80 120 160 200 240 280 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 230a i d = 115a
ixys reserves the right to change limits, test conditions, and dimensions. FMM150-0075X2F ixys ref: FMM150-0075X2F(68)8-28-09 fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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